首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
ELASTICALLY ENHANCED NONRADIATIVE RECOMBINATION AT ALXGA1-XAS-GAAS HETERO-INTERFACE
被引:14
|
作者
:
JOHNSTON, WD
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
JOHNSTON, WD
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
LOGAN, RA
机构
:
[1]
BELL TEL LABS INC,HOLMDEL,NJ 07733
[2]
BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
:
APPLIED PHYSICS LETTERS
|
1976年
/ 28卷
/ 03期
关键词
:
D O I
:
10.1063/1.88667
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:140 / 142
页数:3
相关论文
共 50 条
[41]
DIFFUSION OF MANGANESE IN GAAS AND ITS EFFECT ON LAYER DISORDERING IN ALXGA1-XAS-GAAS SUPERLATTICES
WU, CH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
WU, CH
HSIEH, KC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HSIEH, KC
HOFLER, GE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HOFLER, GE
ELZEIN, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
ELZEIN, N
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
HOLONYAK, N
APPLIED PHYSICS LETTERS,
1991,
59
(10)
: 1224
-
1226
[42]
Composition of interface potential in MIp-AlxGa1-xAs/GaAs solar cell and analysis of interface recombination
Tu, Jielei
论文数:
0
引用数:
0
h-index:
0
机构:
Dept. of Phys., Sichuan Univ., Chengdu 610064, China
Dept. of Phys., Sichuan Univ., Chengdu 610064, China
Tu, Jielei
Lin, Libin
论文数:
0
引用数:
0
h-index:
0
机构:
Dept. of Phys., Sichuan Univ., Chengdu 610064, China
Dept. of Phys., Sichuan Univ., Chengdu 610064, China
Lin, Libin
Chen, Tingjin
论文数:
0
引用数:
0
h-index:
0
机构:
Dept. of Phys., Sichuan Univ., Chengdu 610064, China
Dept. of Phys., Sichuan Univ., Chengdu 610064, China
Chen, Tingjin
Yuan, Hairong
论文数:
0
引用数:
0
h-index:
0
机构:
Dept. of Phys., Sichuan Univ., Chengdu 610064, China
Dept. of Phys., Sichuan Univ., Chengdu 610064, China
Yuan, Hairong
Taiyangneng Xuebao/Acta Energiae Solaris Sinica,
2002,
23
(04):
: 445
-
449
[43]
ATOMIC DIFFUSION MEDIATED BY INTRINSIC POINT-DEFECTS IN GAAS AND ALXGA1-XAS-GAAS SUPERLATTICES
IGUCHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
Canon Inc. Research Center, Atsugi-shi, Kanagawa-ken, 243-01
IGUCHI, H
JOURNAL OF MATERIALS RESEARCH,
1991,
6
(07)
: 1542
-
1552
[44]
REDUCTION OF AL CONTAMINATION IN GAAS LAYER OF LPE-GROWN ALXGA1-XAS-GAAS HETEROSTRUCTURES
KOPF, L
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
KOPF, L
SUMSKI, S
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
SUMSKI, S
JOURNAL OF CRYSTAL GROWTH,
1975,
28
(03)
: 365
-
366
[45]
BIAS-FREE SELECTIVELY DOPED ALXGA1-XAS-GAAS PICOSECOND PHOTODETECTORS
CHEN, CY
论文数:
0
引用数:
0
h-index:
0
CHEN, CY
CHO, AY
论文数:
0
引用数:
0
h-index:
0
CHO, AY
BETHEA, CG
论文数:
0
引用数:
0
h-index:
0
BETHEA, CG
GARBINSKI, PA
论文数:
0
引用数:
0
h-index:
0
GARBINSKI, PA
APPLIED PHYSICS LETTERS,
1982,
41
(03)
: 282
-
284
[46]
FABRICATION OF GATABLE SUB-MICRON CHANNELS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
OWUSUSEKYERE, K
论文数:
0
引用数:
0
h-index:
0
OWUSUSEKYERE, K
CHANG, AM
论文数:
0
引用数:
0
h-index:
0
CHANG, AM
CHANG, TY
论文数:
0
引用数:
0
h-index:
0
CHANG, TY
APPLIED PHYSICS LETTERS,
1988,
52
(15)
: 1246
-
1248
[47]
EFFECTS OF MICROCRACKING ON ALXGA1-XAS-GAAS QUANTUM WELL LASERS GROWN ON SI
DEPPE, DG
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
DEPPE, DG
HALL, DC
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
HALL, DC
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
HOLONYAK, N
MATYI, RJ
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
MATYI, RJ
SHICHIJO, H
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
SHICHIJO, H
EPLER, JE
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
EPLER, JE
APPLIED PHYSICS LETTERS,
1988,
53
(10)
: 874
-
876
[48]
ISO-ELECTRONIC IMPURITY-INDUCED DISORDERING - ALXGA1-XAS-GAAS/IN
TANG, TK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ENGN RES CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801
TANG, TK
ALWAN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ENGN RES CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801
ALWAN, JJ
HERZINGER, CM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ENGN RES CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801
HERZINGER, CM
COCKERILL, TM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ENGN RES CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801
COCKERILL, TM
CROOK, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ENGN RES CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801
CROOK, A
DETEMPLE, TA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ENGN RES CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801
DETEMPLE, TA
COLEMAN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ENGN RES CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801
COLEMAN, JJ
BAKER, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ENGN RES CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801
BAKER, JE
APPLIED PHYSICS LETTERS,
1991,
59
(22)
: 2880
-
2882
[49]
STACKING AND LAYER DISORDERING OF ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES
MEEHAN, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ELECT ENGN RES LAB,URBANA,IL 61801
MEEHAN, K
HSIEH, KC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ELECT ENGN RES LAB,URBANA,IL 61801
HSIEH, KC
COSTRINI, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ELECT ENGN RES LAB,URBANA,IL 61801
COSTRINI, G
KALISKI, RW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ELECT ENGN RES LAB,URBANA,IL 61801
KALISKI, RW
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ELECT ENGN RES LAB,URBANA,IL 61801
HOLONYAK, N
COLEMAN, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,ELECT ENGN RES LAB,URBANA,IL 61801
COLEMAN, JJ
APPLIED PHYSICS LETTERS,
1986,
48
(13)
: 861
-
863
[50]
PHONON-ASSISTED RECOMBINATION IN QUANTUM-WELL MO-CVD ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
HOLONYAK, N
KOLBAS, RM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
KOLBAS, RM
LAIDIG, WD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
LAIDIG, WD
VOJAK, BA
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
VOJAK, BA
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DUPUIS, RD
DAPKUS, PD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801
DAPKUS, PD
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(11)
: 1837
-
1837
←
1
2
3
4
5
→