IN-SITU PROCESSING OF SILICON-CARBIDE

Development of doping processes which allow fabrication of highly doped layers in situ in SE is discussed. Comparison of implantation profiles, calculated using an empirical simulator, with experimental results are also reported. Point contact current voltage (PCIV) measurements are presented for dopant profiles obtained using a pulsed uv-excimer laser to activate pre-implanted impurities and dope virgin SiC from spin-on-glass dopant sources. Our experimental data shows pulsed excimer laser processing (PELF) has the potential to be an effective, low temperature, selective doping process for the SiC industry and research community.