APPROACH OF SELECTIVE NUCLEATION AND EPITAXY OF DIAMOND FILMS ON SI(100)

Heteroepitaxial diamond films were selectively nucleated and grown on mirror-polished single crystalline (100) silicon by microwave plasma assisted chemical vapor deposition (MWCVD). The silicon substrates were coated by 0.5 mum thick SiO2 films patterned by a standard photolithography process. The selective nucleation was performed under a negative substrate bias condition. Results show that fine patterns of (100) oriented diamond films can be obtained with high deposition selectivity and fine-line definition. In spite of the relatively large crystal size a structure edge roughness of <0.3 mum was achieved.