Simulation study on short channel double-gate junctionless field-effect transistors

被引：9

作者：

Wu, Meile ^{[1
]}

Jin, Xiaoshi ^{[1
]}

Chuai, Rongyan ^{[1
]}

Liu, Xi ^{[1
]}

Lee, Jong-Ho ^{[2
]}

机构：

[1] Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang 110870, Peoples R China

[2] Seoul Natl Univ, Sch EECS Eng & ISRC, Seoul 151742, South Korea

来源：

JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 03期

关键词：

short channel effect; double-gate; junctionless field-effect transistor; device simulation;

D O I：

10.1088/1674-4926/34/3/034004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study the characteristics of short channel double-gate (DG) junctionless (JL) FETs by device simulation. Output I-V characteristic degradations such as an extremely reduced channel length induced subthreshold slope increase and the threshold voltage shift due to variations of body doping and channel length have been systematically analyzed. Distributions of electron concentration, electric field and potential in the body channel region are also analyzed. Comparisons with conventional inversion-mode (IM) FETs, which can demonstrate the advantages of JL FETs, have also been performed.

引用

页数：8

共 50 条

[1] Simulation study on short channel double-gate junctionless field-effect transistors
吴美乐
靳晓诗
揣荣岩
刘溪
JongHo Lee
[J]. Journal of Semiconductors, 2013, 34 (03) : 35 - 42
[2] Simulation study on short channel double-gate junctionless field-effect transistors
吴美乐
靳晓诗
揣荣岩
刘溪
Jong-Ho Lee
[J]. Journal of Semiconductors, 2013, (03) : 35 - 42
[3] A computational study of short-channel effects in double-gate junctionless graphene nanoribbon field-effect transistors
Khalil Tamersit
[J]. Journal of Computational Electronics, 2019, 18 : 1214 - 1221
[4] A computational study of short-channel effects in double-gate junctionless graphene nanoribbon field-effect transistors
Tamersit, Khalil
[J]. JOURNAL OF COMPUTATIONAL ELECTRONICS, 2019, 18 (04) : 1214 - 1221
[5] Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors
Gnudi, Antonio
Reggiani, Susanna
Gnani, Elena
Baccarani, Giorgio
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (04) : 1342 - 1348
[6] Short Channel Continuous Model for Double-Gate Junctionless Transistors
Paz, Bruna Cardoso
Pavanello, Marcelo Antonio
Avila, Fernando
Cerdeira, Antonio
[J]. 2014 INTERNATIONAL CARIBBEAN CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICCDCS), 2014,
[7] A compact model of subthreshold characteristics for short channel double-gate junctionless field effect transistors
Jin, Xiaoshi
Liu, Xi
Chuai, Rongyan
Lee, Jung-Hee
Lee, Jong-Ho
[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2014, 65 (03):
[8] A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects
Raksharam
Dutta, Aloke K.
[J]. SOLID-STATE ELECTRONICS, 2017, 130 : 33 - 40
[9] Explicit drain current model of junctionless double-gate field-effect transistors
Yesayan, Ashkhen
Pregaldiny, Fabien
Sallese, Jean-Michel
[J]. SOLID-STATE ELECTRONICS, 2013, 89 : 134 - 138
[10] Charge-Based Modeling of Junctionless Double-Gate Field-Effect Transistors
Sallese, Jean-Michel
Chevillon, Nicolas
Lallement, Christophe
Iniguez, Benjamin
Pregaldiny, Fabien
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (08) : 2628 - 2637

← 1 2 3 4 5 →