MECHANISMS OF HYDROGEN EFFECT ON ELECTRIC AND PHOTOELECTRIC PROPERTIES OF PD-P(N)-INP AND PD-N-GAP DIODE STRUCTURES

被引:0
|
作者
KOVALEVSKAYA, GG
MEREDOV, MM
PENTSOV, AV
RUSSU, EV
SLOBODCHIKOV, SV
FETISOVA, VM
机构
来源
ZHURNAL TEKHNICHESKOI FIZIKI | 1991年 / 61卷 / 09期
关键词
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:173 / 176
页数:4
相关论文
共 50 条
  • [41] Effect of the nature of a solvent on properties of Pd-P catalysts in hydrogenation of ortho-chloronitrobenzene
    Skripov, N. I.
    Belykh, L. B.
    Sterenchuk, T. P.
    Schmidt, F. K.
    RUSSIAN JOURNAL OF APPLIED CHEMISTRY, 2015, 88 (08) : 1255 - 1260
  • [42] Microstructural properties of SiC thin film deposited by RF sputtering technique and its role on the barrier parameters of n-InP/Pd and n-GaP/Pd junctions as an interlayer
    Guzeldir, B.
    Baltakesmez, A.
    Saglam, M.
    PHYSICA B-CONDENSED MATTER, 2022, 647
  • [43] Pd/native nitride/n-GaAs structures as hydrogen sensors
    Tasaltin, Nevin
    Dumludag, Fatih
    Ebeoglu, Mehmet Ali
    Yuzer, Hayrettin
    Ozturk, Zafer Ziya
    SENSORS AND ACTUATORS B-CHEMICAL, 2008, 130 (01) : 59 - 64
  • [44] Effect of the state of the silicon surface on hydrogen sensitivity of Pd/n-Si barrier structures
    Kalygina, VM
    Khludkova, LS
    Balyuba, VI
    Davydova, TA
    SEMICONDUCTORS, 2002, 36 (10) : 1136 - 1137
  • [45] PHOTOELECTRIC EFFECT IN A VARIABLE-GAP P-N STRUCTURE
    TSARENKOV, GV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 166 - 171
  • [46] Effect of the state of the silicon surface on hydrogen sensitivity of Pd/n-Si barrier structures
    V. M. Kalygina
    L. S. Khludkova
    V. I. Balyuba
    T. A. Davydova
    Semiconductors, 2002, 36 : 1136 - 1137
  • [47] Hall effect measurements on p-n-p InP structures
    Sequeira, C. A. C.
    Santos, D. M. F.
    BRAZILIAN JOURNAL OF PHYSICS, 2008, 38 (01) : 147 - 155
  • [48] SOME ELECTRICAL AND PHOTOELECTRIC CHARACTERISTICS OF N-V AND P-V-N STRUCTURES MADE OF GAP
    NASLEDOV, DN
    POPOV, YG
    PUTILOVSKAYA, MY
    SLOBODCHIKOV, SV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1351 - 1352
  • [49] SELECTIVE PHOTOELECTRIC EFFECT IN VARIABLE-GAP GA1-XAIXSB P-N STRUCTURES
    DEDEGKAEV, TT
    IMENKOV, AN
    KRYUKOV, II
    LIDEIKIS, TP
    TSARENKOV, BV
    SHERNYAKOV, YM
    YAKOVLEV, YP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (02): : 155 - 157
  • [50] EFFECT OF AN ELECTRIC FIELD ON SWITCHING PROCESSES IN P-N-P-N STRUCTURES
    LEBEDEV, AA
    UVAROV, AI
    CHELNOKOV, VE
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (08): : 1358 - +