MICROSTRUCTURE AND MICRO-INDENTATION FRACTURE OF SIC-WHISKER-REINFORCED SI3N4 COMPOSITE STUDIED BY HIGH-RESOLUTION ELECTRON-MICROSCOPY

被引：11
|
作者：
LEE, BT
HIRAGA, K
机构：
[1] Tohoku Univ, Sendai
来源：
MATERIALS TRANSACTIONS JIM | 1993年 / 34卷 / 10期
关键词：
SI3N4-SIC WHISKER COMPOSITE; HIGH-RESOLUTION ELECTRON MICROSCOPY; MICRO-INDENTATION TECHNIQUE; TOUGHENING MECHANISM;
D O I：
10.2320/matertrans1989.34.930
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Microstructure and fracture behavior of a SiC-whisker-reinforced Si3N4 composite have been investigated by transmission (TEM) and high-resolution electron microscopy (HREM) and micro-indentation fracture (MIF) technique. SiC whiskers (SiC(w)) are homogeneously dispersed in the Si3N4 matrix. Most of the SiC(w) have a beta-type cubic structure with many twins and stacking faults. Amorphous layers of about 1 nm in thickness are observed at Si3N4 grain boundaries and Si3N4/SiC(w) interfaces. Cracks mainly propagate along the Si3N4 grain boundaries and Si3N4/SiC(w) interfaces in the indentation made at room temperature and 1200-degrees-C. Fracture toughening effects are due to multi-mechanism of crack deflection, bridging and microcracking.
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页码：930 / 936
页数：7
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