144-DEGREES-C OPERATION OF 1.3 MU-M INGAASP VERTICAL CAVITY LASERS ON GAAS SUBSTRATES

被引：46
|
作者：
DUDLEY, JJ
ISHIKAWA, M
BABIC, DI
MILLER, BI
MIRIN, R
JIANG, WB
BOWERS, JE
HU, EL
机构：
[1] Electrical and Computer Engineering Department, University of California, Santa Barbara
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 26期
关键词：
D O I：
10.1063/1.107972
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report lasing at temperatures as high as 144-degrees-C in long-wavelength InGaAsP vertical cavity lasers. The devices are optically pumped and employ a novel cavity design using GaAs/AlAs quarter-wavelength stacks for one mirror. The characteristic temperature T0 of the device increases from 42 K at room temperature to 81 K at temperatures above 80-degrees-C as the gain peak moves into resonance with the longer wavelength cavity mode.
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页码：3095 / 3097
页数：3
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