A COMPARISON OF TEMPERATURE-DEPENDENCE OF LASING CHARACTERISTICS OF 1.3 MU-M INGAASP AND GAAS DH LASERS

被引：8

作者：

DUTTA, NK ^{[1
]}

NELSON, RJ ^{[1
]}

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 10期

关键词：

D O I：

10.1109/T-ED.1981.20537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1222 / 1223

页数：2

共 50 条

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[7] THRESHOLD TEMPERATURE-DEPENDENCE OF SUBNANOSECOND OPTICALLY-EXCITED 1.3-MU-M INGAASP LASERS
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