SCANNING TUNNELING MICROSCOPY

被引:0
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作者
VANDELEEMPUT, LEC
VANKEMPEN, H
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中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A scanning tunnelling microscope can image surfaces down to the atomic scale. Its very high resolution is caused by its local probing mechanism: a tunnel current which flows through the outermost atom of a scanning tip to the sample. Its invention, about ten years ago, was based on an ingenious blend of quantum physics, mechanical design and electronic control. Since then, it has proved to bc a very versatile instrument. Its applications range from the characterization of surface roughness to atomic reconstructions, and from doped semiconductors to cell membranes. It can operate in ultra high vacuum, in air, in reactive gases, in corrosive solutions or at cryogenic temperatures. This paper reviews the evolution of scanning tunnelling microscopy in the first decade after its invention. Attention is focused on the basics of STM: tunnelling theory, mechanical design and modes of operation. Representative examples of applications in various fields of research are discussed.
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页码:1165 / 1240
页数:76
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