POROUS SILICON LAYERS AND ITS OXIDE FOR THE SILICON-ON-INSULATOR STRUCTURE

被引：9
|
作者：
TAKAI, H [1 ]
ITOH, T [1 ]
机构：
[1] WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO 160,JAPAN
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 01期
关键词：
D O I：
10.1063/1.337686
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：222 / 225
页数：4
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