Effect of copper slurry on polishing characteristics

被引：3
|
作者：
Hu Yi [1 ]
Liu Yuling [1 ]
Liu Xiaoyan [1 ]
Wang Liran [1 ]
He Yangang [1 ]
机构：
[1] Hebei Univ Technol, Inst Microelect, Tianjin 300130, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2011年 / 32卷 / 11期
关键词：
copper slurry; chemical mechanical planarization; WIWNU;
D O I：
10.1088/1674-4926/32/11/116001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The composition of the polishing solution is optimized by investigating the impact of the WIWNU (the so-called within-wafer-non-uniformity WIWNU) and the removal rate (RR) on the polishing characteristics of copper. The oxidizer concentration is 1 Vol%; the abrasive concentration is 0.8 Vol%; the chelating agent of the solution is 2 Vol%. The working pressure is 1 kPa. The defect on the surface is degraded and the surface is clean after polishing. The removal rate is 289 nm/min and the WIWNU is 0.065. The surface roughness measured by AFM after CMP (chemical mechanical planarization) is 0.22 nm.
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Effect of copper slurry on polishing characteristics
    胡轶
    刘玉岭
    刘效岩
    王立冉
    何彦刚
    [J]. Journal of Semiconductors, 2011, 32 (11) : 172 - 176
  • [2] Effect of slurry selectivity on dielectric erosion and copper dishing in copper chemical-mechanical polishing
    Noh, K
    Saka, N
    Chun, JH
    [J]. CIRP ANNALS-MANUFACTURING TECHNOLOGY, 2004, 53 (01) : 463 - 466
  • [3] The effect of hydrogen peroxide in a citric acid based copper slurry on Cu polishing
    Eom, Dae-Hong
    Kim, In-Kwon
    Han, Ja-Hyung
    Park, Jin-Goo
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (01) : D38 - D44
  • [4] Development of flexible polishing method using magnetic slurry - effect of movable permanent magnet on polishing characteristics
    [J]. Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering, 1997, 63 (08): : 1143 - 1147
  • [5] Slurry admittance and its effect on polishing
    Evans, DR
    [J]. CHEMICAL-MECHANICAL PLANARIZATION, 2003, 767 : 187 - 192
  • [6] Chemical mechanical polishing of copper using silica slurry
    Kondo, S
    Sakuma, N
    Homma, Y
    Ohashi, N
    [J]. PROCEEDINGS OF THE SYMPOSIA ON ELECTROCHEMICAL PROCESSING IN ULSI FABRICATION I AND INTERCONNECT AND CONTACT METALLIZATION: MATERIALS, PROCESSES, AND RELIABILITY, 1999, 98 (06): : 195 - 205
  • [7] Effect of Slurry Application/Injection Methods and Polishing Conditions on Bow Wave Characteristics
    Liao, X.
    Sampurno, Y.
    Zhuang, Y.
    Sudargho, F.
    Rice, A.
    Philipossian, A.
    [J]. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), 2011, 34 (01): : 659 - 663
  • [8] Development of a Copper Chemical Mechanical Polishing Slurry at Neutral pH Based on Ceria Slurry
    Kim, Yung Jun
    Kwon, Oh Joong
    Kang, Min Cheol
    Suh, Myung-Won
    Im, Young
    Kim, Jae Jeong
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (10) : H952 - H958
  • [9] Study of slurry chemistry in chemical mechanical polishing (CMP) of copper
    Lee, SM
    Mahajan, U
    Chen, Z
    Singh, RK
    [J]. CHEMICAL MECHANICAL PLANARIZATION IN IC DEVICE MANUFACTURING III, PROCEEDINGS, 2000, 99 (37): : 187 - 192
  • [10] Stabilization of alumina slurry for chemical-mechanical polishing of copper
    Clarkson Univ, Potsdam, United States
    [J]. Langmuir, 15 (3563-3566):
12345