Effect of copper slurry on polishing characteristics

被引：0
|
作者：
胡轶 [1 ]
刘玉岭 [1 ]
刘效岩 [1 ]
王立冉 [1 ]
何彦刚 [1 ]
机构：
[1] Institute of Microelectronics,Hebei University of Technology
来源：
Journal of Semiconductors | 2011年 / 32卷 / 11期
关键词：
copper slurry; chemical mechanical planarization; WIWNU;
D O I：
暂无
中图分类号：
TN405 [制造工艺];
学科分类号：
080903 ; 1401 ;
摘要：
The composition of the polishing solution is optimized by investigating the impact of the WIWNU (the so-called within-wafer-non-uniformity WIWNU) and the removal rate(RR) on the polishing characteristics of copper.The oxidizer concentration is 1 Vol%;the abrasive concentration is 0.8 Vol%;the chelating agent of the solution is 2 Vol%.The working pressure is 1 kPa.The defect on the surface is degraded and the surface is clean after polishing.The removal rate is 289 nm/min and the WIWNU is 0.065.The surface roughness measured by AFM after CMP(chemical mechanical planarization) is 0.22 nm.
引用
收藏
页码：172 / 176
页数：5
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