THERMAL-CONDUCTIVITY OF CR-DOPED GAAS AT LOW-TEMPERATURE

被引：11

作者：

VUILLERMOZ, PL

LAUGIER, A

MAI, C

机构：

[1] INST NATL SCI APPL LYON, CNRS, LAB PHYS MAT, 20 AVE ALBERT EINSTEIN, 69621 VILLEURBANNE, FRANCE

[2] INST NATL SCI APPL LYON, CNRS, GRP RECH MET PHYS, 20 AVE ALBERT EINSTEIN, 69621 VILLEURBANNE, FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 11期

关键词：

D O I：

10.1063/1.321537

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4623 / 4626

页数：4

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