THE INFLUENCE OF SUPERCOOLING ON THE LIQUID-PHASE EPITAXIAL-GROWTH OF INAS1-XSBX ON (100) GASB SUBSTRATES

被引：17
|
作者：
MANI, H
JOULLIE, A
BHAN, J
SCHILLER, C
PRIMOT, J
机构：
[1] LAB ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE
[2] CTR NATL ETUD TELECOMMUN,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期
关键词：
D O I：
10.1007/BF02653368
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：289 / 294
页数：6
相关论文
共 50 条
  • [41] KINETIC-STUDY OF LIQUID-PHASE EPITAXIAL-GROWTH ON PROFILED SEMICONDUCTOR SUBSTRATES
    ZHAO, DH
    LIU, HD
    [J]. ELECTRONICS LETTERS, 1989, 25 (03) : 227 - 228
  • [42] LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-QUALITY GAINASSB INAS FOR PHOTODIODES
    GONG, XY
    KAN, H
    YAMAGUCHI, T
    SUZUKI, I
    AOYAMA, M
    KUMAGAWA, M
    ROWELL, NL
    AIGUO, W
    RINFRET, R
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 : 125 - 127
  • [43] THE INFLUENCE OF TI AND ZR ADDITIONS ON GAAS LIQUID-PHASE EPITAXIAL-GROWTH
    STEVENSON, DA
    KETRUSH, PI
    CHANG, SC
    BORSHCHEVSKY, A
    [J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 832 - 834
  • [44] LIQUID-PHASE EPITAXIAL-GROWTH OF PBSE ON (111) AND (100) BAF2
    MCCANN, PJ
    FONSTAD, CG
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 114 (04) : 687 - 692
  • [45] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASSB-GASB AND INGAASSB-ALGAASSB DH WAFERS
    KOBAYASHI, N
    HORIKOSHI, Y
    UEMURA, C
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (11) : 2169 - 2170
  • [46] LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF GA1-XINXASYSB1-Y ALLOWS LATTICE MATCHED WITH GASB
    KAROUTA, F
    MANI, H
    BHAN, J
    HUA, FJ
    JOULLIE, A
    [J]. REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (11): : 1459 - 1467
  • [47] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASP ON GAAS1-YPY SUBSTRATES (Y=0.31 AND 0.39)
    FUJIMOTO, A
    SHIMURA, M
    WATANABE, H
    TAKEUCHI, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (05): : 675 - 681
  • [48] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASP AND INP ON MESA-PATTERNED INP SUBSTRATES
    FELDMAN, RD
    AUSTIN, RF
    [J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) : 1 - 8
  • [49] SUMMARY ABSTRACT - LIQUID-PHASE EPITAXIAL-GROWTH OF (HGCD)TE ON CD(TESE) SUBSTRATES
    WOOD, RA
    SCHMIT, JL
    CHUNG, HK
    MAGEE, TJ
    WOOLHOUSE, GR
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01): : 93 - 94
  • [50] SELECTIVE EPITAXIAL-GROWTH OF GAAS FROM LIQUID-PHASE
    PISKORSKI, MM
    STAREEV, GD
    [J]. SOLID-STATE ELECTRONICS, 1975, 18 (10) : 859 - &
12345