A COMPUTATIONALLY EFFICIENT SHORT CHANNEL MOSFET CURRENT MODEL FOR VLSI CIRCUIT SIMULATION

被引：0
|
作者：
YANG, P [1 ]
CHATTERJEE, P [1 ]
机构：
[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 10期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1692 / 1693
页数：2
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