A COMPUTATIONALLY EFFICIENT SHORT CHANNEL MOSFET CURRENT MODEL FOR VLSI CIRCUIT SIMULATION

被引：0

作者：

YANG, P ^{[1
]}

CHATTERJEE, P ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 10期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1692 / 1693

页数：2

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