共 50 条
- [1] STRUCTURAL INTERPRETATION OF THE LOW-TEMPERATURE REFLOW OF BOROPHOSPHOSILICATE GLASSES DOPED WITH ARSENIC [J]. GLASS TECHNOLOGY, 1989, 30 (03): : 110 - 112
- [2] Structural interpretation of the low temperature reflow of borophosphosilicate glasses doped with arsenic [J]. Glass Technology, 1992, v (0n): : 110 - 112
- [3] LOW-TEMPERATURE REFLOW OF BOROPHOSPHOSILICATE GLASSES MADE FROM ORGANIC AND INORGANIC SOURCES [J]. GLASS TECHNOLOGY, 1994, 35 (04): : 186 - 188
- [4] CONTROL OF BF2 DISSOCIATION IN HIGH-CURRENT ION-IMPLANTATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 49 - 54
- [6] DESIGN FOR A LOW-TEMPERATURE ION-IMPLANTATION AND LUMINESCENCE CRYOSTAT [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1976, 9 (04): : 264 - 266
- [8] BF2+ ION-IMPLANTATION INTO VERY-LOW-TEMPERATURE SI WAFER [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B): : 3627 - 3629
- [9] Comparison of ultra-low-energy ion implantation of boron and BF2 [J]. SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS, 1999, 568 : 71 - 75
- [10] FORMATION OF AMORPHOUS GAP LAYERS BY ION-IMPLANTATION AT LOW-TEMPERATURE [J]. EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 196 - 199