BF2+ ION-IMPLANTATION INTO VERY-LOW-TEMPERATURE SI WAFER

被引：6

作者：

TAKAKURA, M ^{[1
]}

KINOSHITA, T ^{[1
]}

URANISHI, T ^{[1
]}

MIYAZAKI, S ^{[1
]}

KOYANAGI, M ^{[1
]}

HIROSE, M ^{[1
]}

机构：

[1] HIROSHIMA UNIV,INTEGRATED SYST RES CTR,HIROSHIMA 724,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

LOW-TEMPERATURE ION IMPLANTATION; BF2+ ION; RUTHERFORD BACKSCATTERING; RECRYSTALLIZATION PROCESS; SHALLOW JUNCTION;

D O I：

10.1143/JJAP.30.3627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BF2+ ions at 30 keV were implanted into silicon wafers held at -100-degrees-C or room temperature. The recrystallization process of the implanted wafers was examined by Rutherford backscattering (RBS) and Raman scattering. The value of chi(min) for wafers implanted at -100-degrees-C and annealed at 600-degrees-C is 0.05, close to that of crystalline Si, while it is 0.08 for the room-temperature implantation. The Raman spectrum for the case of low-temperature implantation also exhibits a smaller amount of residual defects than that for the room-temperature implantation.

引用

页码：3627 / 3629

页数：3

共 50 条

[1] A STUDY OF LATTICE DAMAGE IN SILICON INDUCED BY BF2+ ION-IMPLANTATION
PAEK, MC
KWON, OJ
LEE, JY
IM, HB
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (08) : 4176 - 4180
[2] BF2+ ION-IMPLANTATION IN SILICON - EFFECTS OF THE IN-FLIGHT DISSOCIATION
QUEIROLO, G
BRESOLIN, C
MEDA, L
ANDERLE, M
CANTERI, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : 777 - 780
[3] Low energy BF2+ ion implantation in silicon
Sugita, Y
Ishikawa, T
Koshitaka, T
Inada, T
[J]. REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY, HOSEI UNIVERSITY, SUPPLEMENT NO 15, MARCH 1997, 1997, : 161 - 164
[4] Low-energy BF2+ ion implantation in silicon
Hirano, D
Ishikawa, T
Kitahara, M
Inada, T
[J]. REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO.16, 1997, : 153 - 156
[5] VERY SHALLOW P+-N JUNCTION FORMATION BY LOW-ENERGY BF2+ ION-IMPLANTATION INTO CRYSTALLINE AND GERMANIUM PREAMORPHIZED SILICON
OZTURK, MC
WORTMAN, JJ
FAIR, RB
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (12) : 963 - 965
[6] EFFECTS OF BF2+ ION-IMPLANTATION ON THE CORROSION-RESISTANCE OF INCONEL-600
RUBIO, JD
HART, RR
GRIFFIN, RB
[J]. CORROSION, 1986, 42 (09) : 557 - 558
[7] ELLIPSOMETRIC CHARACTERIZATION OF AMORPHOUS-SILICON LAYERS AFTER BF2+ ION-IMPLANTATION
HOLGADO, S
MARTINEZ, J
GARRIDO, J
PIQUERAS, J
[J]. DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES, 1994, (135): : 43 - 46
[8] BF2+ ion implantation in strained-Si/SiGe/Si hetero-structures
Morioka, J
Irieda, S
Ishidoya, Y
Inada, T
Sugii, N
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 242 (1-2): : 630 - 632
[9] Surface Oxidation Effects During Low Energy BF2+ Ion Implantation
Kondratenko, Serguei
Reece, Ronald N.
Hsu, P. K.
Zhao, Hongchen
[J]. ION IMPLANTATION TECHNOLOGY 2010, 2010, 1321 : 127 - +
[10] The effect of photoresist outgassing on boron clustering and diffusion in low energy BF2+ ion implantation
Kopalidis, P
Kondratenko, S
[J]. SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY, 2004, 810 : 319 - 324

← 1 2 3 4 5 →