HIGH-VOLTAGE SILICON-CARBIDE RECTIFIERS - RESULTS OF EXPERIMENTS AND SIMULATION

被引：1
|
作者：
RAMBERG, LP
SAVAGE, S
GUSTAFSSON, U
SCHONER, A
机构：
[1] IMC Industrial Microelectronics Center, Kista, S-164 21
来源：
PHYSICA SCRIPTA | 1994年 / 54卷
关键词：
D O I：
10.1088/0031-8949/1994/T54/015
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Low reverse leakage silicon carbide pin rectifier diodes with a breakdown voltage reaching 1100 V are experimentally shown to have acceptably low forward voltage drops, dominated by the built-in voltage. Numerical simulations of the experimental structure, using a measured carrier lifetime of 25 ns, validate the existence of a conductive plasma in the lowly doped base layer, despite a poor injection efficiency, related to the incomplete ionization of the aluminium acceptor. Simulation also indicates the need for a lifetime of similar to 100 ns in a 3.0 kV device.
引用
收藏
页码：65 / 67
页数：3
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