A HIGH-CURRENT DRIVABILITY I-ALGAAS/N-GAAS DOPED-CHANNEL MIS-LIKE FET (DMT)

被引：49
|
作者：
HIDA, H
OKAMOTO, A
TOYOSHIMA, H
OHATA, K
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 11期
关键词：
D O I：
10.1109/EDL.1986.26497
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：625 / 626
页数：2
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    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1852 - 1852
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    [J]. IEEE Transactions on Electron Devices, 1986, ED-33 (11)
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    [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (12) : 557 - 559
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    [J]. SOLID-STATE ELECTRONICS, 1995, 38 (10) : 1747 - 1753
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    HIDA, H
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    [J]. GAAS IC SYMPOSIUM /: TECHNICAL DIGEST 1989, 1989, : 129 - 132
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