NEW HIGH-CURRENT DRIVABILITY MIS-LIKE FETS UTILIZING A HIGHLY DOPED THIN GAAS CHANNEL

被引：0
|
作者：
HIDA, H [1 ]
OKAMOTO, A [1 ]
TOYOSHIMA, H [1 ]
TAHARA, S [1 ]
OHATA, K [1 ]
机构：
[1] NEC CORP,MICROELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期
关键词：
D O I：
10.1109/T-ED.1986.22795
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1852 / 1852
页数：1
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