HOT-ELECTRONS AND NONEQUILIBRIUM LA PHONONS IN DELTA-DOPED GAAS

被引：6
|
作者：
DANILCHENKO, B [1 ]
KLIMASHOV, A [1 ]
ROSHKO, S [1 ]
ASCHE, M [1 ]
机构：
[1] PAUL DRUDE INST FESTKORPERELEKTR,BERLIN,GERMANY
来源：
PHYSICAL REVIEW B | 1994年 / 50卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.50.5725
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The behavior of emitted LA phonons when an electric field is applied to delta-doped [001] GaAs is investigated by the time-of-flight method. The characteristics show peculiar features due to specific interaction processes involved, i.e., direct emission by heated carriers as well as resonance absorption of nonequilibrium LA phonons besides decay and conversion processes of high-energy phonons. The latter contributions are in accordance with Monte Carlo simulations.
引用
收藏
页码：5725 / 5727
页数：3
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