Hot electrons and nonequilibrium phonons in multiple delta-doped GaAs

被引：0
|
作者：
Asche, M [1 ]
Kleinert, P [1 ]
Hey, R [1 ]
Kostial, H [1 ]
Danilchenko, B [1 ]
Klimashov, A [1 ]
Roshko, S [1 ]
机构：
[1] PAUL DRUDE INST FESTKORPERELEKT,D-10117 BERLIN,GERMANY
来源：
HOT CARRIERS IN SEMICONDUCTORS | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：85 / 88
页数：4
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