CHARACTERIZATION OF STRESS GENERATED IN POLYCRYSTALLINE SILICON DURING THERMAL-OXIDATION BY LASER RAMAN-SPECTROSCOPY

被引：4
|
作者：
KAWATA, M
KATODA, T
机构：
[1] Department of Electronic Engineering, Faculty of Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 11期
关键词：
D O I：
10.1063/1.356614
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The generation and relaxation of stress in polycrystalline silicon (poly-Si) by oxidation were studied based on laser Raman spectra. The rapid generation of compressive stress and saturation of its value with oxidation period were observed at temperatures between 650 and 850-degrees-C. The saturated value of the stress was independent of the oxidation temperature. The generation and saturation of stress during oxidation at 850-degrees-C can be explained by taking into account preferential oxidation at the grain boundary, expansion of volume at grain boundaries, and retardation of oxidation rate due to stress. The relaxation of compressive stress during oxidation at 900-degrees-C was also found. The relaxation can be explained by taking into account the viscous flow of silicon oxide at grain boundaries.
引用
收藏
页码：7456 / 7459
页数：4
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