ANALYSIS OF CHARGE CONTROL IN SI DELTA-DOPED FIELD-EFFECT TRANSISTOR

The Schrodinger's equation for two-dimensionally quantized electrons in a V-shaped well and Poisson's equation including three-dimensional hole distribution have been self-consistently solved. Based on this model we have analyzed the charge control process at room temperature in the SI delta-doped field-effect transistors. It was found that the electron density of the channel as a function of the applied gate voltage could be well approximated by a quadratic expression. The influences of the device structure parameters on the charge control process have been studied. From the calculated gate capacitance-voltage behavior, the device performance has been estimated.