STRANSKI-KRASTANOV GROWTH OF THIN-FILM - MONTE-CARLO SIMULATION

被引:10
|
作者
VENALAINEN, O
HEINIO, J
KASKI, K
机构
[1] Department of Electrical Engineering, Tampere University of Technology, Tampere, 33101
来源
PHYSICA SCRIPTA | 1991年 / T38卷
关键词
D O I
10.1088/0031-8949/1991/T38/014
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Growth modes of thin films on a solid surface are studied by using a Solid-On-Solid model. Monte Carlo technique is used to simulate adsorption, desorption, and diffusion processes of the solid-vapour interface. The emphasis is on the Stranski-Krastanov growth mode which is a combination of Frank-van der Merve and Volmer-Weber growth modes. Inclusion of an anisotropy factor into the attractive surface potential leads to an initially layerwise growth, which abruptly turns into growth of separate islands. This is characteristic of Stranski-Krastanov growth. The growth mode is verified from snapshot pictures of the growing surface and from the time evolution of the surface roughness as measured by the standard deviation of the layer thickness.
引用
收藏
页码:66 / 69
页数:4
相关论文
共 50 条
  • [31] Stranski-Krastanov growth of Sn on a polycrystalline Al film surface initiated by the wetting of Al by Sn
    Eisenmenger-Sittner, C
    Bangert, H
    Störi, H
    Brenner, J
    Barna, PB
    SURFACE SCIENCE, 2001, 489 (1-3) : 161 - 168
  • [32] Monte Carlo simulation of thin-film growth on a surface with a triangular lattice
    Wei, HL
    Liu, ZL
    Yao, KL
    VACUUM, 1999, 52 (04) : 435 - 440
  • [33] Coarsening kinetics of heteroepitaxial islands in nucleationless Stranski-Krastanov growth
    Liu, P
    Zhang, YW
    Lu, C
    PHYSICAL REVIEW B, 2003, 68 (03)
  • [34] COMMENTS ON STRANSKI-KRASTANOV GROWTH OF BI AND AG ON SI(100)
    AKHTER, P
    BAIG, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7A): : L1203 - L1203
  • [35] Si/Ge intermixing during Ge Stranski-Krastanov growth
    Portavoce, Alain
    Hoummada, Khalid
    Ronda, Antoine
    Mangelinck, Dominique
    Berbezier, Isabelle
    BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2014, 5 : 2374 - 2382
  • [36] Kinetic monte-carlo simulation of ultra-thin Ag film growth
    Chen, Shuhan
    Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology, 2014, 34 (06): : 625 - 630
  • [37] Stable island arrays by height-constrained Stranski-Krastanov growth
    Liang, J
    Suo, Z
    APPLIED PHYSICS LETTERS, 2001, 79 (20) : 3251 - 3253
  • [38] InGaN quantum dot growth in the limits of Stranski-Krastanov and spinodal decomposition
    Figge, Stephan
    Tessarek, Christian
    Aschenbrenner, Timo
    Hommel, Detlef
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (08): : 1765 - 1776
  • [39] Optical anisotropy of Stranski-Krastanov growth surface of InAs on GaAs (001)
    Kita, T
    Tango, H
    Tachikawa, K
    Yamashita, K
    Nishino, T
    Nakayama, T
    Murayama, M
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 365 - 366
  • [40] COMMENTS ON STRANSKI-KRASTANOV GROWTH OF BI AND AG ON SI(100) - REPLY
    YAMADA, T
    ABE, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7A): : L1204 - L1204