CHARACTERISTICS FOR 4MB ION-IMPLANTED BUBBLE MEMORY MODULES

被引：0
|
作者：
KATO, Y
机构：
[1] NEC, Kawasaki, Jpn, NEC, Kawasaki, Jpn
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1987年 / 23卷 / 05期
关键词：
D O I：
10.1109/TMAG.1987.1065372
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
5
引用
收藏
页码：2566 / 2568
页数：3
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