ZN-DIFFUSION-INDUCED DISORDERING OF INGAAS/ALGAINAS MULTIPLE-QUANTUM-WELL AND ITS APPLICATION TO LONG-WAVELENGTH LASER

Zn-diffusion-induced disordering of the InGaAs/AlGaInAs multiple quantum well (MQW) is investigated as a new processing technique for long-wavelength optoelectronic devices. Complete disordering of the MQW structure is confirmed through the observation of the shortening of the photoluminescence peak wavelength and secondary ion mass spectroscopy (SIMS) measurement. Lattice-matched disordering is also confirmed with X-ray diffraction. ii long-wavelength buried-MQW laser is fabricated for the first time, in which index-waveguide end carrier confinement are obtained by disordering. The pulsed oscillation at room temperature is achieved near 1.56 mu m.