IN-SITU CORE-LEVEL PHOTOELECTRON-SPECTROSCOPY STUDY OF INDIUM SEGREGATION AT GAINAS/GAAS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY

被引：30
|
作者：
LARIVE, M
NAGLE, J
LANDESMAN, JP
MARCADET, X
MOTTET, C
BOIS, P
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期
关键词：
D O I：
10.1116/1.586951
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In situ ultraviolet photoelectron spectroscopy (UPS) measurements have been performed at GaInAs/GaAs (100) interfaces. The high depth resolution of the UPS technique applied to the specific case of GaInAs/GaAs heterostructures [core-level photoelectron escape depth lambda almost-equal-to 2.1 monolayers (MLs)] is shown, yielding quantitative informations on the Ga/In atomic profiles at the ML scale. A surface segregation model is developped and the phenomenological segregation energy is obtained by UPS. This energy is used to generate potential energy profiles in a calculation of the energy of photoluminescence (PL) lines in GaInAs/GaAs quantum wells; the quantitative agreement with measured PL lines is very good.
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收藏
页码：1413 / 1417
页数：5
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