INVESTIGATION OF MOLECULAR-BEAM EPITAXIALLY GROWN CDTE ON GAAS BY X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：11
|
作者：
WAAG, A
WU, YS
BICKNELLTASSIUS, RN
GONSERBUNTROCK, C
LANDWEHR, G
机构：
[1] Physikalisches Institut, Universität Würzburg
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 01期
关键词：
D O I：
10.1063/1.347118
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
X-ray photoelectron spectroscopy studies of CdTe-GaAs interfaces are reported. The growth start of CdTe on GaAs can be nearly stoichiometric if convenient growth parameters are chosen. The valence-band offset between these two materials is found to be large (470 meV). Cd-Te-metal-GaAs multilayers have been grown with very thin metal films. The CdTe-GaAs band offset is not influenced by such intermediary metal layers. The experimentally obtained value for the valence-band offset is compared with recent theoretical calculations taking into account interface dipoles.
引用
收藏
页码：212 / 217
页数：6
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