EFFECT OF ULTRASONIC VIBRATIONS ON THE GROWTH OF INXGA1-XSB MIXED-CRYSTALS (III)

被引：14

作者：

TSURUTA, T ^{[1
]}

YAMASHITA, K ^{[1
]}

ADACHI, S ^{[1
]}

HAYAKAWA, Y ^{[1
]}

KUMAGAWA, M ^{[1
]}

机构：

[1] ISHIKAWAJIMA HARIMA HEAVY IND CO LTD,RES INST,KOTO KU,TOKYO 135,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷

关键词：

ULTRASONIC VIBRATION; CRYSTAL GROWTH; CONSTITUTIONAL SUPERCOOLING; INXGA1-XSB; SINGLE CRYSTAL;

D O I：

10.7567/JJAPS.31S1.23

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature change in GaSb melt caused by introducing ultrasonic vibrations of 10 kHz was measured to investigate why InxGa1-xSb single crystals were grown under vibrations. The vibrations reduced the temperature difference near the melt surface across the radial direction, but they did not influence the temperature difference along the melt depth. The stirring of the melt by vibrations brought about the decrease of constitutional supercooling, and as a result the growth of InxGa1-xSb single crystals was promoted.

引用

页码：23 / 25

页数：3

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