VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS

被引：1232
|
作者：
KASTNER, M
ADLER, D
FRITZSCHE, H
机构：
[1] MIT,CTR MAT SCI & ENGN,DEPT PHYS,CAMBRIDGE,MA 02139
[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
[3] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637
[4] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637
来源：
PHYSICAL REVIEW LETTERS | 1976年 / 37卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.37.1504
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1504 / 1507
页数：4
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