INDIRECT RECOMBINATION OF VACANCIES AND INTERSTITIAL ATOMS IN IRRADIATED SILICON

被引：0
|
作者：
KHOLODAR, GA [1 ]
DANKOVSKII, YV [1 ]
KONOPLYANYI, VV [1 ]
VINETSKII, VL [1 ]
机构：
[1] TG SHEVCHENKO STATE UNIV,KIEV,UKSSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 09期
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D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
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页码：1016 / 1020
页数：5
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