BAND DISCONTINUITIES AND INTERFACE FERMI-LEVEL POSITIONS IN GE-GAAS(110) HETEROJUNCTIONS

被引：17

|

作者：

KOWALCZYK, SP

GRANT, RW

WALDROP, JR

KRAUT, EA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：684 / 686

页数：3

相关论文

共 50 条

[21] FERMI-LEVEL MOVEMENT AND ATOMIC GEOMETRY AT THE AL/GAAS(001) INTERFACE
CHAMBERS, SA
PHYSICAL REVIEW B, 1989, 39 (17) : 12664 - 12671
[22] FIELD-EFFECT INTERFACE CONDUCTANCE IN GE-GAAS N-N HETEROJUNCTIONS ( GE-GAAS HETEROJUNCTION INTERFACE CONDUCTANCE EFFECT OF ELECTRIC FIELD ON AC + DC TECHNIQUES E )
ESAKI, L
HOWARD, WE
HEER, J
APPLIED PHYSICS LETTERS, 1964, 4 (01) : 3 - &
[23] INDEPENDENCE OF FERMI-LEVEL POSITION AND VALENCE-BAND EDGE DISCONTINUITY AT GAAS-GE(100) INTERFACES
CHIARADIA, P
KATNANI, AD
SANG, HW
BAUER, RS
PHYSICAL REVIEW LETTERS, 1984, 52 (14) : 1246 - 1249
[24] PHOTOVOLTAIC EFFECTS IN TEMPERATURE-DEPENDENT FERMI-LEVEL MOVEMENT FOR GAAS(110)
ALDAO, CM
WADDILL, GD
BENNING, PJ
CAPASSO, C
WEAVER, JH
PHYSICAL REVIEW B, 1990, 41 (09): : 6092 - 6095
[25] ELECTRONIC-STRUCTURE OF GE-GAAS(111) AND (111) HETEROJUNCTIONS
LOUIS, E
SOLID STATE COMMUNICATIONS, 1977, 24 (12) : 849 - 852
[26] PHOTOEMISSION-STUDIES OF HETEROJUNCTION INTERFACE FORMATION - GE-GAAS(110) AND GE-SI(111)
MARGARITONDO, G
STOFFEL, NG
KATNANI, AD
EDELMAN, HS
BERTONI, CM
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 784 - 786
[27] INFLUENCE OF METHOD OF PREPARATION ON STRUCTURE AND PROPERTIES OF GE-GAAS HETEROJUNCTIONS
ASEEV, AL
POGORELOV, YN
STENIN, SI
SHUMSKY, VN
THIN SOLID FILMS, 1976, 32 (02) : 351 - 354
[28] BAND DISCONTINUITIES FOR THE (110)-INTERFACES OF SEMICONDUCTOR HETEROJUNCTIONS
MUNOZ, A
DURAN, JC
FLORES, F
SURFACE SCIENCE, 1987, 181 (03) : L200 - L204
[29] THE ELECTRONIC-STRUCTURE OF GE-GAAS(110) INTERFACES
MONCH, W
BAUER, RS
GANT, H
MURSCHALL, R
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 498 - 506
[30] GE-GAAS (110) INTERFACE - SELF-CONSISTENT CALCULATION OF INTERFACE STATES AND ELECTRONIC-STRUCTURE
PICKETT, WE
LOUIE, SG
COHEN, ML
PHYSICAL REVIEW LETTERS, 1977, 39 (02) : 109 - 112

← 1 2 3 4 5 →