PHOTOLUMINESCENCE STUDY OF LIQUID-PHASE ELECTROEPITAXIALLY GROWN GAINASSB ON (100)GASB

被引：18
|
作者：
IYER, S
HEGDE, S
BAJAJ, KK
ABULFADL, A
MITCHEL, W
机构：
[1] UNIV DAYTON, RES INST, DAYTON, OH 45469 USA
[2] EMORY UNIV, DEPT PHYS, ATLANTA, GA 30322 USA
[3] WRIGHT LAB, MAT DIRECTORATE, WRIGHT PATTERSON AFB, OH 45433 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 08期
关键词：
D O I：
10.1063/1.352859
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Low-temperature (4.5 K) photoluminescence (PL) spectra of liquid phase electroepitaxially grown GaSb and GaInAsSb have been examined. The excitonic transitions observed in GaSb and GaInAsSb layers of compositions close to the GaSb comer of the phase diagram indicate an excellent quality of the grown layers. A systematic trend in the low-temperature PL spectra is observed with the change in the alloy composition. The overall PL emission efficiency decreases and the number of excitonic transitions are fewer with the shift in the composition towards the lower band gap. Shift in the PL peak energy corresponding to the band to band transition with temperature was determined. The linear part of the shift above 100 K exhibits a slope of -0.3 meV/K.
引用
收藏
页码：3958 / 3961
页数：4
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