KINETICS OF REACTION AT ROOM-TEMPERATURE IN THIN SILVER METAL COUPLES

被引:24
|
作者
MARINKOVIC, Z
SIMIC, V
机构
关键词
D O I
10.1016/0040-6090(91)90265-Y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The reaction kinetics of compound formation at room temperature in thin film Ag-Me (Me = Ga, In, Sn, Te) couples have been investigated by X-ray diffraction. The decrease in the diffraction peak of silver or the metal, or the increase in the diffraction peak of the corresponding compound, have been followed as a function of time. The rate of compound formation has been found to increase as the melting points of the metal and of the compound formed decrease.
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页码:127 / 135
页数:9
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