KINETICS OF REACTION AT ROOM-TEMPERATURE IN THIN SILVER METAL COUPLES

The reaction kinetics of compound formation at room temperature in thin film Ag-Me (Me = Ga, In, Sn, Te) couples have been investigated by X-ray diffraction. The decrease in the diffraction peak of silver or the metal, or the increase in the diffraction peak of the corresponding compound, have been followed as a function of time. The rate of compound formation has been found to increase as the melting points of the metal and of the compound formed decrease.