A SIMPLE-MODEL FOR SEPARATING INTERFACE AND OXIDE CHARGE EFFECTS IN MOS DEVICE CHARACTERISTICS

被引：116

作者：

GALLOWAY, KF ^{[1
]}

GAITAN, M ^{[1
]}

RUSSELL, TJ ^{[1
]}

机构：

[1] NBS,DIV SEMICOND DEVICES & CIRCUITS,GAITHERSBURG,MD 20899

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1497 / 1501

页数：5

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