A SIMPLE-MODEL FOR SEPARATING INTERFACE AND OXIDE CHARGE EFFECTS IN MOS DEVICE CHARACTERISTICS

被引：116

作者：

GALLOWAY, KF ^{[1
]}

GAITAN, M ^{[1
]}

RUSSELL, TJ ^{[1
]}

机构：

[1] NBS,DIV SEMICOND DEVICES & CIRCUITS,GAITHERSBURG,MD 20899

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333537

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1497 / 1501

页数：5

共 50 条

[1] A SIMPLE-MODEL FOR THE OVERLAP CAPACITANCE OF A VLSI MOS DEVICE
SHRIVASTAVA, R
FITZPATRICK, K
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1870 - 1875
[2] A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors
Savic, Z
Radjenovic, B
MICROELECTRONICS RELIABILITY, 1997, 37 (07) : 1147 - 1150
[3] SIMPLE-MODEL FOR PREDICTING RADIATION EFFECTS IN MOS DEVICES
FREEMAN, R
HOLMESSIEDLE, A
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (06) : 1216 - 1225
[4] SIMPLE TECHNIQUE FOR SEPARATING THE EFFECTS OF INTERFACE TRAPS AND TRAPPED-OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
MCWHORTER, PJ
WINOKUR, PS
APPLIED PHYSICS LETTERS, 1986, 48 (02) : 133 - 135
[5] A SIMPLE-MODEL FOR THE MOS-TRANSISTOR IN SATURATION
ELNOKALI, M
MIRANDA, H
SOLID-STATE ELECTRONICS, 1986, 29 (06) : 591 - 596
[6] ADMITTANCE OF AN MOS DEVICE WITH INTERFACE CHARGE INHOMOGENEITIES
BREWS, JR
JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) : 3451 - &
[7] A SIMPLE-MODEL FOR CHARGE-DENSITY WAVE DYNAMICS
TUCKER, JR
LYONS, WG
SYNTHETIC METALS, 1989, 29 (2-3) : F399 - F406
[8] SIMPLE-MODEL AND STUDY OF CHARGE HANDLING AND INJECTION IN CHARGE-COUPLED-DEVICES
FERGUSON, RS
RYAN, WD
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1981, 128 (06): : 218 - 224
[9] A SIMPLE-MODEL FOR HIGH-TC OXIDE SUPERCONDUCTORS
CHUI, ST
ZIMAN, T
PHYSICS LETTERS A, 1990, 145 (01) : 41 - 45
[10] THE IMAGING OF INTERFACE STATES AND TRAPPED OXIDE CHARGE IN MOS STRUCTURES
MCCABE, EM
WILSON, T
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 123 (02): : 549 - 560

← 1 2 3 4 5 →