EFFECTS OF DEIONIZED WATER RINSES ON GATE OXIDE LEAKAGE CURRENTS

被引：0
|
作者：
CHONKO, MA [1 ]
机构：
[1] MOTOROLA INC,AUSTIN,TX 78721
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C130 / C130
页数：1
相关论文
共 50 条
  • [31] Radiation effects on gate induced drain leakage current in metal oxide semiconductor transistors
    Das, N.C.
    Nathan, V.
    Tallon, R.
    Maier, R.J.
    Journal of Applied Physics, 1992, 72 (10):
  • [32] Behaviour of the DC leakage currents of polymeric metal oxide surge arresters in water penetration tests
    Lahti, K
    Kannus, K
    Nousiainen, K
    IEEE TRANSACTIONS ON POWER DELIVERY, 1998, 13 (02) : 459 - 464
  • [33] Modelling and simulation of gate leakage currents of solution-processed OTFT
    Hengen, Stefan
    Alt, Milan
    Hernandez-Sosa, Gerardo
    Giehl, Juergen
    Lemmer, Uli
    Mechau, Norman
    ORGANIC ELECTRONICS, 2014, 15 (03) : 829 - 834
  • [34] COMMENTS ON GATE LEAKAGE CURRENTS IN MOS FIELD-EFFECT TRANSISTORS
    NEGRO, VC
    KENNEDY, EJ
    PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08): : 1540 - +
  • [35] Design optimization of stacked layer dielectrics for minimum gate leakage currents
    Zhang, J
    Yuan, JS
    Ma, Y
    Oates, AS
    SOLID-STATE ELECTRONICS, 2000, 44 (12) : 2165 - 2170
  • [36] Diagnosis of Interconnect Full Open Defects in the Presence of Gate Leakage Currents
    Arumi, Daniel
    Rodriguez-Montanes, Rosa
    Figueras, Joan
    Eichenberger, Stefan
    Hora, Camelia
    Kruseman, Bram
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2013, 32 (02) : 301 - 312
  • [37] Gate-induced drain leakage currents in metal oxide semiconductor field effect transistors with high-κ dielectric
    Chang, S
    Lee, J
    Shin, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (7A): : 4432 - 4435
  • [38] Gate-induced drain leakage currents in metal oxide semiconductor field effect transistors with high-κ dielectric
    Chang, Sung-Il
    Lee, Jongho
    Shin, Hyungcheol
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (7 A): : 4432 - 4435
  • [39] Research on the gate leakage current of PMOSFET with ultra-thin gate oxide
    Hu, Shigang
    Wu, Xiaofeng
    Xi, Zaifang
    Journal of Convergence Information Technology, 2012, 7 (11) : 44 - 51
  • [40] Nickel silicide metal gate FDSOI devices with improved gate oxide leakage
    Krivokapic, Z
    Maszara, W
    Achutan, K
    King, P
    Gray, J
    Sidorow, M
    Zhao, E
    Zhang, J
    Chan, J
    Marathe, A
    Lin, MR
    INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, : 271 - 274
12345