共 50 条
- [43] Comparison of relaxation process of compressive and tensile strains in InGaAs lattice-mismatched layers on InP substrates [J]. 1600, Publ by JJAP, Minato-ku, Japan (33):
- [46] Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates [J]. Semiconductors, 2003, 37 : 1104 - 1106
- [47] COMPARISON OF RELAXATION PROCESS OF COMPRESSIVE AND TENSILE STRAINS IN INGAAS LATTICE-MISMATCHED LAYERS ON INP SUBSTRATES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 230 - 234
- [50] Strain relaxation of lattice-mismatched In0.2Ga0.8As/GaAs superlattices on GaAs(001) substrates [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 357 - 360