LITHIUM-DOPED GALLIUM ARSENIDE TUNNEL DIODES

被引：7

作者：

EPSTEIN, AS

CALDWELL, JF

机构：

来源：

关键词：

D O I：

10.1063/1.1713161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3050 / &

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[1] GERMANIUM-DOPED GALLIUM ARSENIDE TUNNEL DIODES
SOLOMON, R
NEWMAN, R
KYLE, NR
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) : 716 - 716
[2] GALLIUM ARSENIDE TUNNEL DIODES
HOLONYAK, N
LESK, IA
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (08): : 1405 - 1409
[3] GALLIUM ARSENIDE TUNNEL DIODES
HAMBLETON, KG
LOW, JJ
SHERWELL, RJ
NATURE, 1960, 185 (4714) : 676 - 677
[4] EXCESS CURRENT IN GALLIUM ARSENIDE TUNNEL DIODES
NANAVATI, RP
DEANDRADE, CA
PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 869 - &
[5] EXCESS AND THERMAL CURRENTS IN GALLIUM ARSENIDE TUNNEL DIODES
AMERICO, C
DEANDRADE, M
SOLID-STATE ELECTRONICS, 1966, 9 (09) : 901 - &
[6] COMMENTS ON EXCESS CURRENT IN GALLIUM - ARSENIDE TUNNEL DIODES
GOLD, RD
NANAVATI, RP
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (05): : 486 - &
[7] TUNNEL EFFECT IN GALLIUM ARSENIDE DIODES AT LOW TEMPERATURES
VUL, BM
ZAVARITS.EI
ZAVARITS.NV
SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (03): : 710 - +
[8] STRUCTURE IN EXCESS CURRENT REGION OF GALLIUM ARSENIDE TUNNEL DIODES
HAMAKER, RW
QUINN, HF
JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) : 2396 - &
[9] ANOMALOUS TENSOELECTRIC EFFECTS IN GALLIUM ARSENIDE TUNNEL DIODES.
Alekseeva, Z.M.
Vyatkin, A.P.
Krivorotov, N.P.
Shchegol', A.A.
Soviet physics journal, 1987, 30 (08): : 716 - 720
[10] ADDITIONAL COMMENTS ON EXCESS CURRENT IN GALLIUM-ARSENIDE TUNNEL DIODES
GOLD, RD
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (08): : 1151 - &