BROAD-BAND MULTILAYER ANTIREFLECTION COATING FOR SEMICONDUCTOR-LASER FACETS

被引：32
|
作者：
BRAUN, DM
JUNGERMAN, RL
机构：
[1] Microwave Technology Division, Hewlett-Packard Company, Santa Rosa, CA, 95403, Mail Stop 1USK
来源：
OPTICS LETTERS | 1995年 / 20卷 / 10期
关键词：
D O I：
10.1364/OL.20.001154
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Using a triple-layer antireflection coating of Al2O3, Si, and SiO2, we have achieved a minimum facet reflectivity of 1 x 10(-6) and a bandwidth of 90 nm for a reflectivity of 5 x 10(-5) or less for 1550-nm center-wavelength InGaAsP semiconductor lasers. A facet reflectivity of 3 x 10(-6) and a bandwidth of 30 nm for a reflectivity of 5 x 10(-5) were achieved for 1310-nm InGaAsP lasers. This coating is applicable to broadband external-cavity-tuned laser sources, edge-emitting light-emitting diodes, and semiconductor laser amplifiers.
引用
收藏
页码：1154 / 1156
页数：3
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