PREPARATION;
ELECTROCHEMICAL BEHAVIOR;
BINARY MNO2-V2O5 SYSTEM;
CHEMICAL DIFFUSION COEFFICIENT OF LITHIUM;
RECHARGEABLE LITHIUM BATTERY;
D O I:
10.1016/0013-4686(92)85221-6
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
New binary oxides, MnO2.xV2O5 (x = 0-0.3), which were formed by heating mixtures of Mn(NO3)2.6H2O and NH4VO3 at various V/Mn atomic ratios and at different temperatures in air, have been characterized by X-ray diffraction method, X-ray photoelectron spectroscopy and infrared spectroscopy. The amount of Li+ ions inserted into the crystal lattice of the oxide increased with increasing x-value in MnO2.xV2O5, and reached ca 1 Li/mole of the oxide with x = 0.6. Furthermore, the thermodynamic and kinetic studies showed that the standard free energy for the lithium insertion, DELTA-G1, is -265 kJ mol-1 in the range of n = 0-1 in LinMnO2.xV2O5 at 25-degrees-C and that the chemical diffusion coefficients of lithium in the oxide matrices are in the range from 10(-9) to 10(-12) cm2 s-1 at 25-degrees-C and increased with increasing V2O5 content in the mixed oxides.
机构:
Univ Paris Est Cretan, UMR CNRS 7182, GESMAT, Inst Chim & Mat Paris Est, Thiais, France
Univ Evry Vol dEssonne, Dept Chim, F-91025 Evry, FranceUniv Paris Est Cretan, UMR CNRS 7182, GESMAT, Inst Chim & Mat Paris Est, Thiais, France
Bach, S.
Boudaoud, A.
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Univ Paris Est Cretan, UMR CNRS 7182, GESMAT, Inst Chim & Mat Paris Est, Thiais, FranceUniv Paris Est Cretan, UMR CNRS 7182, GESMAT, Inst Chim & Mat Paris Est, Thiais, France
Boudaoud, A.
Emery, N.
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Univ Paris Est Cretan, UMR CNRS 7182, GESMAT, Inst Chim & Mat Paris Est, Thiais, FranceUniv Paris Est Cretan, UMR CNRS 7182, GESMAT, Inst Chim & Mat Paris Est, Thiais, France
Emery, N.
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机构:
Baddour-Hadjean, R.
Pereira-Ramos, J. -P.
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机构:
Univ Paris Est Cretan, UMR CNRS 7182, GESMAT, Inst Chim & Mat Paris Est, Thiais, FranceUniv Paris Est Cretan, UMR CNRS 7182, GESMAT, Inst Chim & Mat Paris Est, Thiais, France
机构:
Govt India, Dept Informat Technol, Ctr Mat Elect Technol, Pune 411008, Maharashtra, IndiaGovt India, Dept Informat Technol, Ctr Mat Elect Technol, Pune 411008, Maharashtra, India
机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
Lim, Sung Hoon
Kim, Do Hyung
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机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
Korea Inst Sci & Technol, Ctr Mat Architecturing, Seoul 136791, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
Kim, Do Hyung
Byun, Ji Young
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Korea Inst Sci & Technol, Ctr Mat Architecturing, Seoul 136791, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
Byun, Ji Young
Kim, Bok Ki
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机构:
Kwangwoon Univ, Dept Elect Engn, Seoul 139701, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
Kim, Bok Ki
Yoon, Woo Young
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Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South KoreaKorea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea