LATTICE-MATCHED SINGLE-CRYSTALLINE DIELECTRIC FILMS (BAXSR1-XF2) ON INP(001) GROWN BY MOLECULAR-BEAM EPITAXY

被引:0
|
作者
TU, CW
SHENG, TT
MACRANDER, AT
PHILLIPS, JM
GUGGENHEIM, HJ
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期
关键词
D O I
10.1116/1.572614
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:528 / 529
页数:2
相关论文
共 50 条
  • [31] Single-crystalline superconducting thin films of electron-doped infinite-layer compounds grown by molecular-beam epitaxy
    Karimoto, S
    Ueda, K
    Naito, M
    Imai, T
    APPLIED PHYSICS LETTERS, 2001, 79 (17) : 2767 - 2769
  • [32] SINGLE-CRYSTAL GROWTH OF NB FILMS ONTO MOLECULAR-BEAM EPITAXY GROWN (001)INAS
    AKAZAKI, T
    NITTA, J
    TAKAYANAGI, H
    APPLIED PHYSICS LETTERS, 1991, 59 (16) : 2037 - 2039
  • [33] Polycrystalline to single-crystalline InN grown on Si(111) substrates by plasma-assisted molecular-beam epitaxy
    Hsiao, CL
    Tu, LW
    Chen, M
    Jiang, ZW
    Fan, NW
    Tu, YJ
    Wang, KR
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (33-36): : L1076 - L1079
  • [34] Single-crystalline BaTiO3 films grown by gas-source molecular beam epitaxy
    Matsubara, Yuya
    Takahashi, Kei S.
    Tokura, Yoshinori
    Kawasaki, Masashi
    APPLIED PHYSICS EXPRESS, 2014, 7 (12) : 125502
  • [35] Some characteristics of silicon-doped In0.52Al0.48As grown lattice-matched on InP substrates by molecular beam epitaxy
    Yoon, SF
    Miao, YB
    Radhakrishnan, K
    THIN SOLID FILMS, 1996, 287 (1-2) : 284 - 287
  • [36] Growth of the single-crystalline ZnO films on Si (111) substrates by plasma-assisted molecular-beam epitaxy
    Koike, K
    Tanite, T
    Sasa, S
    Inoue, M
    Yano, M
    PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS, 2002, 692 : 655 - 660
  • [37] GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF GAXIN1-XASYP1-Y LATTICE-MATCHED TO GAAS
    ZHANG, G
    APPLIED PHYSICS LETTERS, 1993, 63 (08) : 1128 - 1130
  • [38] STRAIN RELAXATION OF GE FILMS GROWN ON A SI(001)-2X1 SURFACE BY MOLECULAR-BEAM EPITAXY
    HIDA, Y
    TAMAGAWA, T
    UEBA, H
    TATSUYAMA, C
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) : 7274 - 7277
  • [39] STRUCTURAL AND ELECTRICAL-PROPERTIES OF LATTICE-MATCHED CA0.44SR0.56F2/GAAS STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    TU, CW
    WANG, SJ
    PHILLIPS, JM
    GIBSON, JM
    STALL, RA
    WUNDER, RJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 637 - 640
  • [40] Molecular-beam epitaxy of high quality lattice matched In1-x-yGaxAlyAs epitaxial layers on InP substrates
    Chua, SJ
    Ramam, A
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03): : 1719 - 1724