Exploration of photosensitive polyimide as the modification layer in thin film microcircuit

被引：3
|
作者：
Liu, Lily [1 ,2 ,3 ,4 ]
Song, Changbin [1 ,2 ,3 ,4 ]
Xue, Bin [1 ,2 ,3 ,4 ]
Li, Jing [1 ,2 ,3 ,4 ]
Wang, Junxi [1 ,2 ,3 ,4 ]
Li, Jinmin [1 ,2 ,3 ,4 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] Beijing Engn Res Ctr 3rd Generat Semicond Mat & A, Beijing 100083, Peoples R China
[3] Chinese Acad Sci, State Key Lab Solid State Lighting, Beijing 100083, Peoples R China
[4] Chinese Acad Sci, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2018年 / 39卷 / 02期
关键词：
thin film; microcircuit; photosensitive polyimide; silicon dioxide; imidization; temperature;
D O I：
10.1088/1674-4926/39/2/026001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Positive type photosensitive polyimide is used as the modification layer in the thin film transistors production process. The photosensitive polyimide is not only used as the second insulating layer, it can also be used instead of a mask because of the photosensitivity. A suitable curing condition can help photosensitive polyimide form the high performance polyimide with orderly texture inside, and the performance of imidization depends on the precise control of temperature, time, and heat control during the curing process. Therefore, experiments of different stepped up heating tests are made, and the ability of protecting silicon dioxide is analyzed.
引用
收藏
页数：4
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