TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF THE HIGH ELECTRON-MOBILITY TRANSISTOR

被引：41
|
作者：
WIDIGER, D [1 ]
HESS, K [1 ]
COLEMAN, JJ [1 ]
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 07期
关键词：
D O I：
10.1109/EDL.1984.25913
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：266 / 269
页数：4
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