ELECTRON-SPECTRA AND INTRINSIC ABSORPTION OF HEAVILY DOPED N-GAAS

被引:0
|
作者
LEVKOV, AN [1 ]
LOMAKIN, GG [1 ]
机构
[1] AM GORKII STATE UNIV,SVERDLOVSK,USSR
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:30 / 35
页数:6
相关论文
共 50 条
  • [41] ELECTRON ACCUMULATION AT THE N-ZNSE/N-GAAS INTERFACE
    MAZURUK, K
    BENZAQUEN, M
    WALSH, D
    JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 357 - 361
  • [42] Intervalenceband and plasmon optical absorption in heavily doped GaAs:C
    Songprakob, W
    Zallen, R
    Tsu, DV
    Liu, WK
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) : 171 - 177
  • [43] OPTICAL-ABSORPTION BY FREE HOLES IN HEAVILY DOPED GAAS
    HUBERMAN, ML
    KSENDZOV, A
    LARSSON, A
    TERHUNE, R
    MASERJIAN, J
    PHYSICAL REVIEW B, 1991, 44 (03): : 1128 - 1133
  • [44] EFFECT OF ELECTRON HEATING ON HALL COEFFICIENT IN N-GAAS
    MUKHERJEE, MN
    KAR, RK
    PHYSICS LETTERS A, 1968, A 28 (06) : 447 - +
  • [45] Comparison between optical and electrophysical data on free electron concentration in tellurium doped n-GaAs
    Yugova T.G.
    Belov A.G.
    Kanevskii V.E.
    Kladova E.I.
    Knyazev S.N.
    Yugova, Tatyana G. (P_Yugov@mail.ru), 1600, Pensoft Publishers (06) : 85 - 89
  • [46] Proton implantation induced damage to heavily doped n-GaAs as envisaged by charge deep-level transient spectroscopy
    Thurzo, I
    Pincik, E
    Cicmanec, P
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 162 (02): : 547 - 557
  • [47] The influence of anodic oxide on the electron concentration in n-GaAs
    Kalygina, V. M.
    Vishnikina, V. V.
    Zarubin, A. N.
    Petrova, Yu S.
    Skakunov, M. S.
    Tolbanov, O. P.
    Tyazhev, A. V.
    Yaskevich, T. M.
    RUSSIAN PHYSICS JOURNAL, 2014, 56 (09) : 984 - 989
  • [48] The influence of anodic oxide on the electron concentration in n-GaAs
    V. M. Kalygina
    V. V. Vishnikina
    А. N. Zarubin
    Yu. S. Petrova
    М. S. Skakunov
    О. P. Тоlbanov
    А. V. Тyazhev
    Т. М. Yaskevich
    Russian Physics Journal, 2014, 56 : 984 - 989
  • [49] NEW ELECTRON-IRRADIATION-INDUCED ELECTRON TRAP IN EPITAXIALLY GROWN SI-DOPED N-GAAS
    AURET, FD
    GOODMAN, SA
    MEYER, WE
    APPLIED PHYSICS LETTERS, 1995, 67 (22) : 3277 - 3279
  • [50] Infrared spectroscopy and electroreflectance in the region of fundamental optical transition E-0 of heavily doped n-GaAs (100)
    Gentsar, P. O.
    Vlasenko, O., I
    Vuichyk, M. V.
    Stronski, O., V
    FUNCTIONAL MATERIALS, 2009, 16 (01): : 23 - 28