Stochastic Mechanism for Charged-Particle Deflection by Means of a Bent Crystal in the TeV Energy Range

被引：8
|
作者：
Shul'ga, N. F. [1 ]
Kirillin, I. V. [1 ]
Truten', V. I. [1 ]
机构：
[1] Kharkov Inst Phys & Technol, Natl Sci Ctr, Akhiezer Inst Theoret Phys, UA-61108 Kharkov, Ukraine
来源：
JOURNAL OF SURFACE INVESTIGATION | 2013年 / 7卷 / 02期
关键词：
Tellurium compounds - Stochastic systems;
D O I：
10.1134/S1027451013020468
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Based on numerical simulation of the motion of charged particles in a crystal, the possibility of deflecting charged particles by means of a bent crystal in the TeV energy range is considered using the stochastic deflection mechanism. The obtained results show that both positively and negatively charged particles can be deflected at an angle noticeably exceeding the critical angle of axial channeling, if the particles are incident on the crystal at a small angle to one of the principal crystallographic axes.
引用
收藏
页码：398 / 400
页数：3
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