ELECTRICAL QUALITY OF LOW-TEMPERATURE (TDEP-LESS-THAN-OR-EQUAL-TO-800-DEGREES-C) EPITAXIAL SILICON - THE EFFECT OF DEPOSITION TEMPERATURE

被引：10

|

作者：

BURGER, WR

REIF, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.340248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：368 / 382

页数：15

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